8th Generation BiCS FLASH Technology Delivers Performance, Efficiency Gains
KIOXIA America, Inc. today announced that it has begun sampling1 new Universal Flash Storage2 (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. Designed for read-intensive applications and high-capacity storage needs, the new devices are powered by KIOXIA’s 8th generation BiCS FLASHTM 3D flash memory technology.
QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance.
Building on these advancements, the new Kioxia devices achieve substantial performance increases3. KIOXIA’s QLC UFS boosts sequential write speeds by 25%, random read speeds by 90%, and random write speeds by 95% compared to the previous generation (UFS 4.0/BiCS6 QLC UFS)4. Write Amplification Factor (WAF) is also improved by up to 3.5x (with WriteBooster disabled).
Well-suited for smartphones and tablets, KIOXIA QLC UFS also supports emerging product categories that demand higher capacity and performance, including PCs, networking, AR/VR, IoT, and AI-enabled devices.
Available in 512-gigabyte (GB) and 1-terabyte (TB) capacities, the new UFS 4.1 devices combine KIOXIA’s advanced BiCS FLASH 3D flash memory and an integrated controller in a JEDEC®-standard package. KIOXIA’s 8th generation BiCS FLASH 3D flash memory introduces CBA (CMOS directly Bonded to Array) technology – an architectural innovation that marks a step-change in flash memory design.
Key features include:
- Compliant with the UFS 4.1 specification. UFS 4.1 is backward-compatible with UFS 4.0 and UFS 3.1.
- KIOXIA BiCS FLASH generation 8 3D flash memory
- WriteBooster support for significantly faster write speeds
- Reduced package size compared to the previous QLC UFS: 11×13 mm → 9×13 mm
“Kioxia continues to advance flash memory technology to meet the growing demand for higher-capacity, high-performance storage,” said Maitry Dholakia, vice president, Memory Business Unit, KIOXIA America, Inc. “Our QLC UFS 4.1 devices reflect ongoing innovation in both architecture and design, enabling our customers to build increasingly capable mobile and connected products.”