The “Next Generation Memory: Global Markets to 2026” report has been added to ResearchAndMarkets.com’s offering.
The global market for next-generation memory is forecast to grow from $5.4 billion in 2021 to $14.8 billion by 2026 with a compound annual growth rate (CAGR) of 22.5% for the period of 2021-2026.
The enterprise storage next-generation memory market should grow from $1.5 billion in 2021 to $4.3 billion by 2026 with a compound annual growth rate (CAGR) of 22.7% for the period of 2021-2026.
The consumer electronics next-generation memory market should grow from $1.3 billion in 2021 to $3.7 billion by 2026 with a compound annual growth rate (CAGR) of 23.1% for the period of 2021-2026.
The increasing demand from data centers and enterprise storage applications, the growing need for universal memory devices and the demand from emerging technologies, including artificial intelligence (AI), the internet of things (IoT) and big data, are major driving factors for market growth.
The rising implementation of wearable devices and the adoption of connected cars are fueling the demand for next-generation memories. The growing adoption of sensor technology in wearable and AI-enabled devices has boosted demand for fast data transfers and high storage density. This in turn creates tremendous growth opportunities within the global next-generation memory market.
This report provides an overview of the global market for next-generation memory and analyzes market trends. Using 2020 as the base year, the report provides estimated market data for the forecast period from 2021 through 2026. Revenue forecasts for this period are segmented based on technology, wafer size, application, and region.
The report also focuses on the major trends and challenges that affect the market and the competitive landscape. It explains the current market trends and provides detailed profiles of the major players and the strategies they adopt to enhance their market presence. The report estimates the size of the global next-generation memory market in 2020 and provides projections of the expected market size through 2026.
Key report features:
- 62 data tables and 50 additional tables
- An overview of the global market for next generation memory
- Estimation of the market size and analyses of the global market trends, with data from 2020, estimates for 2021, 2022, 2024, with a projection of CAGR through 2026
- Analysis of new opportunities, challenges, and technological changes within the industry and highlights of the market potential by technology, storage type, application, and region
- Detailed analysis of the current market trends and forecast, new products launches and product enhancement, technological innovation, upcoming technologies, and the technical progress of the industry
- Detailed description of non-volatile memory and volatile memory, their types, and advantages
- Market share analysis of the key companies of the industry and coverage of events like mergers & acquisitions, joint ventures, collaborations or partnerships, and other key market strategies
- Company profiles of major players in the market, including Samsung Electronics Co. Ltd., Micron Technology Inc., KIOXIA Holdings Corp. (formerly Toshiba Memory Corp.), Intel Corp., SK Hynix Inc. and Western Digital Corp.
Key Topics Covered:
Market Breakdown by Technology
- Non-volatile Memory
- Magneto-resistive Random-Access Memory
- Ferroelectric Random-Access Memory
- Resistive Random-Access Memory
- Three-Dimensional XPoint
- Nano Random Access Memory
- Volatile Memory
- High-Bandwidth Memory
- Hybrid Memory Cube
Market Breakdown by Wafer Size
- 200 Millimeters
- 300 Millimeters
- 450 Millimeters
Market Breakdown by Application
- Consumer Electronics
- Enterprise Storage
- Industrial
- Telecommunications
- Automotive and Transportation
- Military and Aerospace
- Healthcare
Market Breakdown by Region
- North American Market Outlook
- European Market Outlook
- Asia-Pacific Market Outlook
- Rest of World Market Outlook
Company Profiles
- 4DS Memory Ltd.
- Advanced Micro Devices Inc.
- Avalanche Technologies Inc.
- Crossbar Inc.
- Dialog Semiconductor Plc (Adesto Technologies Corp.)
- Everspin Technologies Inc.
- Fujitsu Ltd.
- Honeywell International Inc.
- Infineon Technologies Ag (Cypress Semiconductor Corp.)
- Intel Corp.
- Kioxia Holdings Corp.
- Micron Technology Inc.
- Nantero Inc.
- NXP Semiconductors N.V.
- Samsung Electronics Co. Ltd.
- Sanmina Corp. (Viking Technology)
- SK Hynix Inc.
- Spin Memory Inc.
- Synopsys Inc.
- Weebit Nano Ltd.
- Western Digital Corp.
- Semiconductor Fab Companies
- DB Hitek
- Globalfoundries
- Semiconductor Manufacturing International Corp.
- Taiwan Semiconductor Manufacturing Company
- Tower Semiconductor Ltd.
- United Microelectronics Corp.
Patent Analysis
- Patents Granted on Memory Technology (2016-2021)
- Magneto-Resistive Random Access Memory (MRAM)
- Resistive Random Access Memory (RRAM)
- Phase Change Memory/Phase-Change RAM (PCM/PCRAM)
- Ferroelectric Random Access Memory (FRAM)
- Hybrid Memory Cube (HMC)
- Hybrid Bandwidth Memory (HBM)Â
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